Poly-SiGe for MEMS-above-CMOS Sensors

Poly-SiGe for MEMS-above-CMOS Sensors

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Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due t.... presented in this chapter represent the first integrated poly-SiGe pressure sensors directly fabricated above their readout circuit. ... W. Kester, Practical design techniques for sensor signal conditioning (Prentice Hall, San Francisco, 1992) 7.

Title:Poly-SiGe for MEMS-above-CMOS Sensors
Author: Pilar Gonzalez Ruiz, Kristin De Meyer, Ann Witvrouw
Publisher:Springer Science & Business Media - 2013-07-17

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